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1-mbit (64k x 16) static ram cy7c1021dv33 cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05460 rev. *f revised december 14, 2010 features ? temperature ranges ? industrial: ?40c to 85c ? automotive-a: ?40c to 85c ? automotive-e: ?40c to 125c ? pin-and function-compatible with cy7c1021cv33 ? high speed ?t aa = 10 ns ? low active power ?i cc = 60 ma @ 10 ns ? low cmos standby power ?i sb2 = 3 ma ? 2.0v data retention ? automatic power-down when deselected ? cmos for optimum speed/power ? independent control of upper and lower bits ? available in pb-free 44-pin 400-mil wide molded soj, 44-pin tsop ii and 48-ball vfbga packages functional description [1] the cy7c1021dv33 is a high-performance cmos static ram organized as 65,536 words by 16 bits. this device has an automatic power-down featur e that significantly reduces power consumption when deselected. writing to the device is accomplished by taking chip enable (ce ) and write enable (we ) inputs low. if byte low enable (ble ) is low, then data from i/o pins (i/o 0 through i/o 7 ), is written into the location specified on the address pins (a 0 through a 15 ). if byte high enable (bhe ) is low, then data from i/o pins (i/o 8 through i/o 15 ) is written into the location specified on the address pins (a 0 through a 15 ). reading from the device is accomplished by taking chip enable (ce ) and output enable (oe ) low while forcing the write enable (we ) high. if byte low enable (ble ) is low, then data from the memory location specified by the address pins will appear on i/o 0 to i/o 7 . if byte high enable (bhe ) is low, then data from memory will appear on i/o 8 to i/o 15 . see the truth table at the end of this data sheet for a complete description of read and write modes. the input/output pins (i/o 0 through i/o 15 ) are placed in a high-impedance state when the device is deselected (ce high), the outputs are disabled (oe high), the bhe and ble are disabled (bhe , ble high), or during a write operation (ce low, and we low). the cy7c1021dv33 is available in pb-free 44-pin 400-mil wide molded soj, 44-pin ts op ii and 48-ball vfbga packages. 64k x 16 ram array i/o 0 ?i/o 7 row decoder a 7 a 6 a 5 a 4 a 3 a 0 column decoder a 9 a 10 a 11 a 12 a 13 a 14 a 15 sense amps data in drivers oe a 2 a 1 i/o 8 ?i/o 15 ce we ble bhe a 8 logic block diagram note 1. for guidelines on sram system design, please refer to the ?sys tem design guidelines? cypress application note, available on t he internet at www.cypress.com [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 2 of 13 selection guide ?10 (industrial/automotive-a) ?12 (automotive-e) [2] unit maximum access time 10 12 ns maximum operating current 60 100 ma maximum cmos standby current 3 15 ma pin configuration [3] we v cc a 11 a 10 nc a 6 a 0 a 3 ce i/o 10 i/o 8 i/o 9 a 4 a 5 i/o 11 i/o 13 i/o 12 i/o 14 i/o 15 v ss a 9 a 8 oe v ss a 7 i/o 0 bhe nc a 2 a 1 ble v cc i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 a 15 a 14 a 13 a 12 nc nc nc 3 2 6 5 4 1 d e b a c f g h nc nc 1 2 3 4 5 6 7 8 9 11 14 31 32 36 35 34 33 37 40 39 38 12 13 41 44 43 42 16 15 29 30 a 5 18 17 20 19 27 28 25 26 22 21 23 24 48-ball vfbga soj/tsop ii top view top view a 6 a 7 a 4 a 3 a 2 a 1 a 0 a 14 a 15 a 8 a 9 a 10 a 11 a 12 a 13 nc nc oe bhe ble ce we i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 i/o 8 i/o 9 i/o 10 i/o 11 i/o 12 i/o 13 i/o 14 i/o 15 v cc v cc v ss v ss nc 10 notes 2. automotive product information is preliminary. 3. nc pins are not connected on the die. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 3 of 13 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ?65 ? c to +150 ? c ambient temperature with power applied............................................. ?55 ? c to +125 ? c supply voltage on v cc to relative gnd [4] .... ?0.3v to +4.6v dc voltage applied to outputs in high-z state [4] ......................................?0.3v to v cc +0.3v dc input voltage [4] ...................................?0.3v to v cc +0.3v current into outputs (low).... ..................................... 20 ma static discharge voltage......... .............. .............. ...... > 2001v (per mil-std-883, method 3015) latch-up current...................................................... >200 ma operating range range ambient temperature v cc speed industrial ?40c to +85c 3.3v ? 0.3v 10 ns automotive-a ?40c to +85c 10 ns automotive-e ?40c to +125c 12 ns dc electrical characteristics over the operating range parameter description test conditions ?10 (ind?l/auto-a) ?12 (auto-e) unit min. max. min. max. v oh output high voltage v cc = min., i oh = ?4.0 ma 2.4 2.4 v v ol output low voltage v cc = min., i ol = 8.0 ma 0.4 0.4 v v ih input high voltage 2.0 v cc + 0.3 2.0 v cc + 0.3 v v il input low voltage [4] ? 0.3 0.8 ? 0.3 0.8 v i ix input leakage current gnd < v i < v cc ? 1+1 ? 5 +5 ? a i oz output leakage current gnd < v i < v cc , output disabled ? 1+1 ? 5 +5 ? a i cc v cc operating supply current v cc = max., i out = 0 ma, f = f max = 1/t rc 100 mhz 60 -ma 83 mhz 55 100 ma 66 mhz 45 90 ma 40 mhz 30 60 ma i sb1 automatic ce power-down current ?ttl inputs max. v cc , ce > v ih v in > v ih or v in < v il , f = f max 10 50 ma i sb2 automatic ce power-down current ?cmos inputs max. v cc , ce > v cc ? 0.3v, v in > v cc ? 0.3v or v in < 0.3v, f = 0 3 15 ma capacitance [5] parameter description test conditions max. unit c in input capacitance t a = 25 ? c, f = 1 mhz, v cc = 3.3v 8 pf c out output capacitance 8 pf thermal resistance [5] parameter description test conditions soj tsop ii vfbga unit ? ja thermal resistance (junction to ambient) still air, soldered on a 3 4.5 inch, four-layer printed circuit board 59.52 53.91 36 ? c/w ? jc thermal resistance (junction to case) 36.75 21.24 9 ? c/w notes 4. v il (min.) = ?2.0v and v ih (max) = v cc + 1v for pulse durations of less than 5 ns. 5. tested initially and after any design or process changes that may affect these parameters. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 4 of 13 ac test loads and waveforms [6] 90% 10% 3.0v gnd 90% 10% all input pulses * capacitive load consists of all components of the test environment rise time: 1 v/ns fall time: 1 v/ns 30 pf* output z = 50 ? 50 ? 1.5v (b) (a) 3.3v output 5 pf (c) r 317 ? r2 351 ? high-z characteristics: note 6. ac characteristics (except high-z) are tested using the load c onditions shown in figure (a). high-z characteristics are teste d for all speeds using the test load shown in figure (c). [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 5 of 13 switching characteristics over the operating range [7] parameter description -10 (ind?l/auto-a) -12 (auto-e) unit min. max. min. max. read cycle t power [8] v cc (typical) to the first access 100 100 ? s t rc read cycle time 10 12 ns t aa address to data valid 10 12 ns t oha data hold from address change 3 3 ns t ace ce low to data valid 10 12 ns t doe oe low to data valid 5 6ns t lzoe oe low to low-z [10] 0 0 ns t hzoe oe high to high-z [9, 10] 5 6ns t lzce ce low to low-z [10] 3 3 ns t hzce ce high to high-z [9, 10] 5 6ns t pu [11] ce low to power-up 0 0 ns t pd [11] ce high to power-down 10 12 ns t dbe byte enable to data valid 5 6ns t lzbe byte enable to low-z 0 0 ns t hzbe byte disable to high-z 6 6ns write cycle [12] t wc write cycle time 10 12 ns t sce ce low to write end 8 9 ns t aw address set-up to write end 8 9 ns t ha address hold from write end 0 0 ns t sa address set-up to write start 0 0 ns t pwe we pulse width 7 8 ns t sd data set-up to write end 5 6 ns t hd data hold from write end 0 0 ns t lzwe we high to low-z [10] 3 3 ns t hzwe we low to high-z [9, 10] 5 6ns t bw byte enable to end of write 7 8 ns notes 7. test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3. 0v. 8. t power gives the minimum amount of time that the power supply should be at typical v cc values until the first memory access can be performed. 9. t hzoe , t hzbe , t hzce , and t hzwe are specified with a load capacitance of 5 pf as in (c) of ac test loads. transition is measured when the outputs enter a high impedance state 10. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any given device. 11. this parameter is guaranteed by design and is not tested. 12. the internal write time of the memory is defined by the overlap of ce low, we low and bhe /ble low. ce , we and bhe /ble must be low to initiate a write and the transition of these signals can termi nate the write. the input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 6 of 13 data retention characteristics over the operating range parameter description conditions min. max. unit v dr v cc for data retention 2 v i ccdr data retention current v cc = v dr = 2.0v, ce > v cc ? 0.3v, v in > v cc ? 0.3v or v in < 0.3v industrial 3 ma automotive 15 ma t cdr [5] chip deselect to data retention time 0 ns t r [13] operation recovery time t rc ns data retention waveform switching waveforms read cycle no. 1 (address transition controlled) [14, 15] read cycle no. 2 (oe controlled) [15, 16] 3.0v 3.0v t cdr v dr > 2v data retention mode t r ce v cc previous data valid data valid rc t aa t oha t rc address data out 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu high impedance t hzoe t hzbe t pd t dbe t lzbe t hzce high impedance i cc i sb oe ce address data out v cc supply bhe ,ble current notes 13. full device operation requires linear v cc ramp from v dr to v cc(min.) > 50 ? s or stable at v cc(min.) > 50 ? s. 14. device is continuously selected. oe , ce , bhe and/or ble = v il . 15. we is high for read cycle. 16. address valid prior to or coincident with ce transition low. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 7 of 13 write cycle no. 1 (ce controlled) [17, 18] write cycle no. 2 (ble or bhe controlled) switching waveforms (continued) t hd t sd t sce t sa t ha t aw t pwe t wc bw t data i/o address ce we bhe ,ble t hd t sd t bw t sa t ha t aw t pwe t wc t sce data i/o address bhe ,ble ce we notes 17. data i/o is high impedance if oe or bhe and/or ble = v ih . 18. if ce goes high simultaneously with we going high, the output remains in a high-impedance state. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 8 of 13 write cycle no. 3 (we controlled, oe low) truth table ce oe we ble bhe i/o 0 ?i/o 7 i/o 8 ?i/o 15 mode power h x x x x high-z high-z power-down standby (i sb ) l l h l l data out data out read ? all bits active (i cc ) l h data out high-z read ? lower bits only active (i cc ) h l high-z data out read ? upper bits only active (i cc ) l x l l l data in data in write ? all bits active (i cc ) l h data in high-z write ? lower bits only active (i cc ) h l high-z data in write ? upper bits only active (i cc ) l h h x x high-z high-z selected, outputs disabled active (i cc ) l x x h h high-z high-z selected, outputs disabled active (i cc ) switching waveforms (continued) t hd t sd t sce t ha t aw t pwe t wc t bw t sa t lzwe t hzwe data i/o address ce we bhe ,ble [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 9 of 13 ordering information speed (ns) ordering code package name package type operating range 10 CY7C1021DV33-10vxi 51-85082 44-pin (400 -mil) molded soj (pb-free) industrial CY7C1021DV33-10zsxi 51-85087 44-pin tsop type ii (pb-free) CY7C1021DV33-10bvxi 51-85150 48-ball vfbga (pb-free) 10 CY7C1021DV33-10zsxa 51-85087 44-pin tsop type ii (pb-free) automotive-a 12 cy7c1021dv33-12zsxe 51-85087 44-pin tsop type ii (pb-free) automotive-e ordering code definitions please contact your local cypress sales repr esentative for availability of these parts. temperature range: x = i or a or e i = industrial; a = automotive-a; e = automotive-e package type: xxx = vx or zsx or bvx vx = 44-pin molded soj (pb-free) zsx = 44-pin tsop type ii (pb-free) bvx = 48-ball vfbga (pb-free) speed: xx = 10 ns or 12 ns v33 = voltage range (3 v to 3.6 v) d = c9, 90 nm technology 1 = data width 16-bits 02 = 1-mbit density 1 = fast asynchronous sram family technology code: c = cmos 7 = sram cy = cypress c cy 1 - xx xxx 7 02 v33 x d 1 [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 10 of 13 package diagrams figure 1. 44-pin (400-mil) molded soj (51-85082) figure 2. 44-pin thin small outline package type ii (51-85087) 51-85082 *c 51-85087 *c [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 11 of 13 figure 3. 48-ball vfbga (6 x 8 x 1 mm) (51-85150) all products and company names mentioned in this docu ment are the trademarks of their respective holders. package diagrams (continued) 51-85150 *f [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 12 of 13 document history page document title: cy7c1021dv33, 1-mbit (64k x 16) static ram document number: 38-05460 rev. ecn no. issue date orig. of change description of change ** 201560 see ecn swi advance information data sheet for c9 ipp *a 233693 see ecn rkf dc parameters are modified as per eros (spec # 01-02165). pb-free offering in ordering information *b 263769 see ecn rkf changed i/o 1 ? i/o 16 to i/o 0 ? i/o 15 added data retention characteristics table added t power spec in switching characteristics table shaded ordering information *c 307601 see ecn rkf reduced speed bins to ?8 and ?10 ns *d 520652 see ecn vkn converted from preliminary to final removed commercial operating range removed 8 ns speed bin added i cc values for the frequencies 83mhz, 66mhz and 40mhz added automotive information updated thermal resistance table updated ordering information table changed overshoot spec from v cc +2v to v cc +1v in footnote #4 *e 2898399 03/24/2010 aju updated package diagrams *f 3109897 12/14/2010 aju added ordering code definitions. updated package diagrams. [+] feedback
cy7c1021dv33 document #: 38-05460 rev. *f page 13 of 13 ? cypress semiconductor corporation, 2004-2010. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent o r other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives , and distributors. to find t he office closest to you, visit us at cypress.com/sales. products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory optical & image sensing cypress.com/go/image psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 5 [+] feedback

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